Datasheet4U Logo Datasheet4U.com

SCH2410-TL-E - Dual N-Channel 60V MOSFET

Features

  • Trench Power MOSFET.
  • 100 % Rg Tested.

📥 Download Datasheet

Datasheet preview – SCH2410-TL-E

Datasheet Details

Part number SCH2410-TL-E
Manufacturer VBsemi
File Size 272.74 KB
Description Dual N-Channel 60V MOSFET
Datasheet download datasheet SCH2410-TL-E Datasheet
Additional preview pages of the SCH2410-TL-E datasheet.

📁 Similar Datasheet

  • SCH2410 - N-Channel Silicon MOSFET (Sanyo)
  • SCH2408 - N-Channel Silicon MOSFET (ON Semiconductor)
  • SCH20000 - (SCHxxxx) STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY (Semtech Corporation)
  • SCH2080KE - N-channel SiC power MOSFET (Rohm)
  • SCH2202 - Bipolar Transistor (ON Semiconductor)
  • SCH2315 - P-Channel MOSFET (Sanyo Semicon Device)
  • SCH25000 - (SCHxxxx) STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY (Semtech Corporation)
  • SCH2805 - P-Channel Silicon MOSFET (ON Semiconductor)
  • SCH2806 - N-Channel MOSFET (Sanyo Semicon Device)
  • SCH2809 - P-Channel Silicon MOSFET (ON Semiconductor)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
SCH2410-TL-E-VB SCH2410-TL-E-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 1.200 at VGS = 10 V 1.300 at VGS = 8 V 60 1.500 at VGS = 4.5V 1.650 at VGS = 2.5V ID (A) 0.3 0.28 0.25 0.15 Qg (Typ.) 0.75 S1 1 SC-89 6 D1 G1 2 D2 3 5 G2 4 S2 Top View FEATURES • Trench Power MOSFET • 100 % Rg Tested APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID IDM 0.30a, b 0.
Published: |