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Ordering number : ENN8222
SCH2315
P-Channel Silicon MOSFET
SCH2315
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with two MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions Ratings -12 ±8 --0.9 --3.6 0.