Click to expand full text
J606-VB
J606-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.0074 at VGS = - 10 V
0.0094 at VGS = - 4.5 V
ID (A)c - 90
- 90
FEATURES • Trench Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • DC/DC Primary Switch
RoHS
COMPLIANT
TO-220AB S
G Drain connected to Tab
GD S Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)c
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya
IDM IAS L = 0.