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20N60 - N-Channel MOSFET

Key Features

  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number 20N60
Manufacturer VBsemi
File Size 246.87 KB
Description N-Channel MOSFET
Datasheet download datasheet 20N60 Datasheet

Full PDF Text Transcription for 20N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20N60. For precise diagrams, and layout, please refer to the original PDF.

20N60-VB 20N60-VB Datasheet N-Channel 650 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configurati...

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J max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 106 14 33 Single 0.