Datasheet4U Logo Datasheet4U.com

20N60 - 600V N-CHANNEL POWER MOSFET

General Description

The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.

This technology is specialized in allowing a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) < 0.45Ω @ VGS=10V, ID=10A.
  • High switching speed.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

Full PDF Text Transcription for 20N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20N60. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced techn...

View more extracted text
an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N60 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.  FEATURES * RDS(ON) < 0.45Ω @ VGS=10V, ID=10A * High switching speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.