EC2612
Description
The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.
Key Features
- low resistance and excellent reliability
- 0.8dB minimum noise figure @ 18GHz
- 1.5dB minimum noise figure @ 40GHz
- 12dB associated gain @ 18GHz
- 9.5dB associated gain @ 40GHz
- Chip size: 0.63 x 0.37 x 0.1 mm
