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EC2612-99F Datasheet 40GHz Super Low Noise pHEMT

Manufacturer: United Monolithic Semiconductors

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Datasheet Details

Part number EC2612-99F
Manufacturer United Monolithic Semiconductors
File Size 817.61 KB
Description 40GHz Super Low Noise pHEMT
Datasheet download datasheet EC2612-99F Datasheet

General Description

The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.

Gate width is 120 µm and the 0.15µm Tshaped aluminium gate

Overview

EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility.

Key Features

  • low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. D: Drain G: Gate S: Source Main Features.
  • 0.8dB minimum noise figure @ 18GHz.
  • 1.5dB minimum noise figure @ 40GHz.
  • 12dB associated gain @ 18GHz.
  • 9.5dB associated gain @ 40GHz.
  • Chip size: 0.63 x 0.37 x 0.1 mm Mai.

More Datasheets from United Monolithic Semiconductors

Part Number Description
EC2612 40GHz Super Low Noise PHEMT