4NM50 - N-CHANNEL POWER MOSFET

Description

The UTC 4NM50 is a high voltage super junction MOSFET and is designed to have better characteristics.

The UTC 4NM50 Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability.

Features

S.
RDS(ON) ≤ 1.3Ω @ VGS=10V, ID=2.0A.
Fast Switching Capability.
Avalanche Energy Tested.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2019 Unisonic Technologies Co. , Ltd 1 of 9 QW-R205-156.F 4NM50.

Unisonic Technologies

📥 Download Datasheet

Datasheet Details

Part number	4NM50
Manufacturer	Unisonic Technologies
File Size	712.75 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	4NM50 Datasheet
Additional preview pages of the 4NM50 datasheet.

📁 Similar Datasheet

4NM120 - N-CHANNEL POWER MOSFET (UTC)
4NM60-U2 - N-CHANNEL SUPER-JUNCTION MOSFET (UTC)

Other Datasheets by Unisonic Technologies

4NM65 - N-CHANNEL POWER MOSFET
4NM65-U2 - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text

UNISONIC TECHNOLOGIES CO., LTD 4NM50 4A, 500V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM50 is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 4NM50 Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications.  FEATURES * RDS(ON) ≤ 1.3Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-156.

Published: Feb 14, 2017 |