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4NM60-U2 - N-CHANNEL SUPER-JUNCTION MOSFET

Description

The UTC 4NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 1.8Ω @ VGS=10V, ID=2.0A.
  • Fast Switching Capability.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 4NM60-U2

Datasheet Details

Part number 4NM60-U2
Manufacturer UTC
File Size 413.45 KB
Description N-CHANNEL SUPER-JUNCTION MOSFET
Datasheet download datasheet 4NM60-U2 Datasheet
Additional preview pages of the 4NM60-U2 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4NM60-U2 4A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.8Ω @ VGS=10V, ID=2.
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