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PK6A4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 10.5mΩ @VGS = 10V
ID 14A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
37 30 100
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
14 11
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 20
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
4 2.
PK6A4BA Datasheet
