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PK648BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.4mΩ @VGS = 10V
ID 75A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
75 47 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
19.8 15.8
Avalanche Current
IAS 37
Avalanche Energy
L =0.1mH
EAS
71
Power Dissipation
TC = 25 °C TC = 100 °C
PD
35 14
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.4 1.
PK648BA Datasheet
