Click to expand full text
PE5A1BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
6.5mΩ @VGS = -4.5V
ID -43A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -20 VGS ±8
TC = 25 °C
-43
Continuous Drain Current4
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C TA = 70 °C
ID
IDM IAS
-27 -18 -14 -50 -39
Avalanche Energy
L = 0.1mH
EAS
76
TC = 25 °C
20
Power Dissipation3 Junction & Storage Temperature Range
TC = 100 °C TA = 25 °C TA = 70 °C
PD TJ, TSTG
8 3.5 2.2 -55 to 150
UNITS V
A
mJ W °C
REV1.
PE5A1BA Datasheet
