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PE5A0DZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 6mΩ @VGS = 4.5V
ID 55A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
55
Continuous Drain Current2
TC = 100 °C TA = 25 °C
ID
35 19
Pulsed Drain Current1
TA = 70 °C
IDM
15 100
Avalanche Current
IAS 32
Avalanche Energy
L = 0.1mH
EAS
51
TC = 25 °C
31
Power Dissipation
TC = 100 °C TA = 25 °C
PD
12.5 3.6
TA = 70 °C
2.
PE5A0DZ Datasheet
