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P1070ETF - N-Channel MOSFET

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Part number P1070ETF
Manufacturer UNIKC
File Size 776.63 KB
Description N-Channel MOSFET
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P1070ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 0.91mΩ @VGS = 10V 10A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2,4 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 10 6 IDM 30 IAS 5 EAS 125 Power Dissipation TC = 25 °C PD 46 TC = 100 °C 18 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RqJC Junction-to-Ambient RqJA 1Pulse width limited by maximum junction temperature.
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