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P1003EK
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
10.5mΩ @VGS = -10V
ID -30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C(Package Limited)
Continuous Drain Current
TC = 25 °C (Silicon Limited)
ID
TC = 100 °C
Pulsed Drain Current1
IDM
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
Avalanche Current
IAS
Avalanche Energy
L = 0.1mH
EAS
TC = 25 °C
Power Dissipation
TC = 100 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction & Storage Temperature Range
TJ, TSTG
LIMITS -30 ±25 -30 -63 -40 -120 -12 -10 -45 102 62.5 25 2.5 1.6
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P1003EK Datasheet
