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UMW AO6802
Dual 30V N-ChanneI MOSFET
1.Description
The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
2.Product Summary
VDS (V)=30V RDS(ON)<40mΩ(VGS=10V) RDS(ON)<55mΩ(VGS=4.5V)
3.Pinning information
Pin
Symbol Description
1,3
G1, G2
GATE
5,2
S1, S2
SOURCE
6,4
D1, D2
DRAIN
D1
D2
G1 1
6 D1
S2 2
5 S1
G2 3
4 D2
G1
G2
S1
S2
SOT23-6
4.Absolute Maximum Ratings TA= 25°C
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current C Power Dissipation B
Junction and Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS VGS ID IDM PD
TJ, TSTG
Maximum 30 ±20 3.5 3 20 1.15 0.