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QM2608N8
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2608N8 meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V -20V
RDSON 48mΩ 70mΩ
ID 3.8A -3.
QM2608N8 Datasheet
