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QM2605S - MOSFETs

Description

The QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Dual SOP8 Pin Configuration D1 D1D2 D2 Absolute Maximum Ratings S1 G1S2 G2 Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous.

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Datasheet Details

Part number QM2605S
Manufacturer UBIQ
File Size 414.89 KB
Description MOSFETs
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Full PDF Text Transcription

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QM2605S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2605S meet the RoHS and Green Product requirement with full function reliability approved. Product Summery BVDSS 20V -20V RDSON 42mΩ 130mΩ Applications ID 4.6A -2.
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