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Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic MetaUCeramic Package
Absolute Maximum Ratings at 25°C
Parameter Collector-EmitterVoltage Emitter-Base Voltage I Symbol V ES vm I Rating 63 3.0 12.5 575 1 200 1 1 I Units V v A W “C “C I 1 I
,L”“-.“.”
:2.54=.25)
Collector Current (Peak) Total Power Dissipation 1 JunctionTemperature StorageTemperature 1 1
‘c
PTPlT T, T,,,
t
<1.52-'.CS)
INCHCS 5.
PH2729430M Datasheet