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PH2729-65M - Radar Pulsed Power Transistor/ 65W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package (22.86) -:i~~~)-j Absolute Maximum Ratings at 25°C Parameter 1 Collector-Emitter rr-- 1 Symbol Voltage 1 V,,, V ES0 L / P,,, TJ T STG 1 1 Rating 65 3.0 8.0 1 Units 1 I v I V Emitter-Base Voltage Collector Current (Peak).

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY
PH2729-8SM Radar Pulsed Power Transistor/ 8.5W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz
PH2729430M Radar Pulsed Power Transistor/ 13OW/ IOOps Pulse/ 10% Duty 2.7 - 2.9 GHz
PH2731-20M Radar Pulsed Power Transistor/ 2OW/ loops Pulse/ 10% Duty 2.7 - 3.1 GHz

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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* z-z -,--= 2 .---= --= -= =c r s an AMP company Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I .300 v2.00 ( Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package (22.86) -:i~~~)-j Absolute Maximum Ratings at 25°C Parameter 1 Collector-Emitter rr-- 1 Symbol Voltage 1 V,,, V ES0 L / P,,, TJ T STG 1 1 Rating 65 3.0 8.0 1 Units 1 I v I V Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation A I 330 200 -65 to +200 I w I “C UNLESS CT;ERVISE NOTED, TDLERANCES A4E INCHIS :WILLIME?;RS 5.005’ :.