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Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
4W
PH1819-4N
v2.00
,975 .‘24 77, i
.
Absolute Maximum Ratings at 25°C
Parameter Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance Symbol Vcm VCES VES0 ‘c PO TJ TST0 eJC Rating
60
60
Units V V V 1 A W “C “C
“C/W
UN-ESS OTHERWlSE ND-ED, TOLERANZES ARE :M1, L,HETERS i . J _ ,253~.DlO , c&43*.25) .0045? OOl:,
3.0 0.
PH1819-4N Datasheet
