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Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP Class A: +48 dBm Typ 3rd Order lnrercept Point . Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
15W
.
PH1819-15N
v2.00
Power Gain I Collector Efficiency Input Return Loss Load Mismatch Tolerance 3rd Order IMD
GP I
%
7.0 25
10 -
-
dB
I’,,=26 V,,=26 V,,=26 V,,=26 V,,=26
V, I,,=25 V. I,,=25 V, I,,=25 V, I,,=25
mA, P,,,$5
W PEP, F=1880 MHz. AF=lOO kHz
1O:l
%
dB dBc
mA, P,,.
PH1819-15N Datasheet
