Datasheet4U Logo Datasheet4U.com

PH1214-8M - Radar Pulsed Power Transistor/ SW/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absolute Maximum Ratings at 25°C . i37z. P10 .304z.531 Storage Temperature Electrical Characteristics at 25°C Broadband Test Fixture Impedances.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PH1214-6M RADAR PULSED POWER TRANSISTOR MA-com
PH1225AL N-channel MOSFET NXP
PH128160T-066-L01Q LCD Module POWERTIP
PH128160T-066-L03Q Display Module POWERTIP
PH128800T002-ZBC01 LCD POWERTIP

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH1214-80M Radar Pulsed Power Transistor - 80 Watts/ 1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty

Full PDF Text Transcription

Click to expand full text
* =s==-z-s .-- z = -----= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absolute Maximum Ratings at 25°C .i37z.P10 .304z.
Published: |