Datasheet4U Logo Datasheet4U.com

PH1225AL - N-channel MOSFET

Description

Logic level N-channel MOSFET in LFPAK package qualified to 150 °C.

Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency gains in switching power converters.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Tyco Electronics
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty Tyco Electronics
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Tyco Electronics
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty Tyco Electronics
PH1214-2M Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz Tyco Electronics

Other Datasheets by NXP Semiconductors

Part Number Description
PH1330AL N-channel MOSFET
PH1730AL N-channel TrenchMOS logic level FET
PH1875L N-channel TrenchMOS logic level FET

Full PDF Text Transcription

Click to expand full text
PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ For computing use only 1.4 Quick reference data Table 1.
Published: |