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PH1214-2M - Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetii: Metal/Ceramic Package c_I- . ?90=.01c (2.29Z.25) . Absolute Maximum Ratings at 25°C Parameter Symbol Rating 65 Units Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature VCES V .1371.313.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-300M Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty

Full PDF Text Transcription

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an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetii: Metal/Ceramic Package c_I- .?90=.01c (2.29Z.25) . Absolute Maximum Ratings at 25°C Parameter Symbol Rating 65 Units Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature VCES V .1371.313 TST0 -65 to ~200 “C UNLTSS II-KERWIS: N3TE% T:L:RAN:ES ARE INCHES (MILL!NET:RS 1.
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