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S8205A - Dual N-Channel MOSFET

Features

  • 5A,20V. rDS(on) = 0.025 @ VGS = 4.5 V rDS(on) = 0.040 @ VGS = 2.5 V. TSSOP-8 Unit: mm Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD R JA R JC Tj. Tstg Rating 20 8 5 20 2.0 1.6 78 40 -55 to +150 Unit V V A A W W /W /W 1 Shen.

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Datasheet Details

Part number S8205A
Manufacturer Tuofeng Semiconductor
File Size 66.71 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet S8205A Datasheet

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type N MMOOSFSEFTET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A Features 5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V rDS(on) = 0.040 @ VGS = 2.5 V. TSSOP-8 Unit: mm Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD R JA R JC Tj.Tstg Rating 20 8 5 20 2.0 1.6 78 40 -55 to +150 Unit V V A A W W /W /W 1 Shenzhen Tuofeng Semiconductor Technology Co.
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