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S8202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Datasheet Details

Part number S8202
Manufacturer Polyfet RF Devices
File Size 37.04 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet download datasheet S8202 Datasheet

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Other Datasheets by Polyfet RF Devices

Part Number Description
S8201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Full PDF Text Transcription

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polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 30 Watts Junction to Case Thermal Resistance o 7.
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