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4606 - Complementary High-Density MOSFET

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Part number 4606
Manufacturer Tuofeng Semiconductor
File Size 312.92 KB
Description Complementary High-Density MOSFET
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    Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm) Max 30V 6.9A 28 @ VGS = 10 V,ID=6.9A 42 @ VGS = 4.5V,ID=5.0A PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m-ohm) Max -30V -6.0 A 50 @ VGS = -10V,ID=- 6.0A 80@VGS = -4.5V, ID=- 5.0A Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter VDS VGS ID IDM Is PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Currenta Drain Currentb (Pulsed) *1 Drain-Source Diode Forward Current a Total Power Dissipationa @TA=25oC Total Power Dissipationa @TA=75oC Operating Junction and Storage Temperature Rangea Thermal Resistance Junction to Ambienta a: Surface Mounted on FR4 Board , t ≤ 5sec .
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