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4606 - N and P-Channel Enhancement Mode Power MOSFET

Description

The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 30V,ID =6.9A RDS(ON) < 21mΩ @ VGS=10V N-channel P-channel Only Schematic diagram RDS(ON) < 32mΩ @ VGS=4.5V.
  • P-Channel VDS = -30V,ID = -6.0A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 60mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired Use times Marking and pin assignment g.
  • Surface mount package SOP-8 top view shen Absolute Maximum Ratings (TA=25℃unless otherwise noted) ngParameter To Drain-Source Voltage Symbo.

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Datasheet Details

Part number 4606
Manufacturer ETC
File Size 3.60 MB
Description N and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 4606 Datasheet
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    sales.Mr.wang13826508770 www.sztssd.com SOP-8 Plastic-Encapsulate MOSFETS 4606 N and P-Channel Enhancement Mode Power MOSFET Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON) < 21mΩ @ VGS=10V N-channel P-channel Only Schematic diagram RDS(ON) < 32mΩ @ VGS=4.5V ● P-Channel VDS = -30V,ID = -6.0A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 60mΩ @ VGS=-4.
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