TSP640M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSP640M
Manufacturer	Truesemi
File Size	258.61 KB
Description	N-Channel MOSFET
Datasheet	TSP640M Datasheet
Additional preview pages of the TSP640M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

18.0A, 200V, RDS(on) = 0.18Ω @VGS = 10 V.
Low gate charge ( typical 40nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

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Published: Apr 12, 2017 |