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TSA18N50M - N-Channel MOSFET

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Datasheet Details

Part number TSA18N50M
Manufacturer Truesemi
File Size 345.28 KB
Description N-Channel MOSFET
Datasheet download datasheet TSA18N50M Datasheet

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSA18N50M TSA18N50M 500V N-Channel MOSFET General.

Key Features

  • 18.0A,500V,Max. RDS(on)=0.38Ω @ VGS =10V.
  • Low gate charge(typical 50nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC.

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