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TSA11N90M - N-Channel MOSFET

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Truesemi

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TSA11N90M N-Channel MOSFET by Truesemi - Datasheet Preview — Datasheet preview – TSA11N90M

Datasheet Details

Part number	TSA11N90M
Manufacturer	Truesemi
File Size	377.16 KB
Description	N-Channel MOSFET
Datasheet	TSA11N90M Datasheet
Additional preview pages of the TSA11N90M datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

11A,900V,Max. RDS(on)=1.20Ω @ VGS =10V.
Low gate charge(typical 52nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive A.

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Published: Apr 12, 2017 |