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TGA2624 - GaN Power Amplifier

General Description

TriQuint’s TGA2624 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

10GHz and provides a superior combination of power, gain and efficiency.

Key Features

  • Frequency Range: 9.
  • 10GHz.
  • PSAT: 42.5dBm @ PIN = 15dBm.
  • P1dB: >38dBm.
  • PAE: >40% @ PIN = 15dBm.
  • Large Signal Gain: 27.5dB.
  • Small Signal Gain: >35dB.
  • Return Loss: >11dB.
  • Bias: VD = 28V, IDQ = 365mA, VG = -2.7V Typical.
  • Pulsed VD: PW = 100us and DC = 10%.
  • Chip Dimensions: 5.0 x 2.62 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General.

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Datasheet Details

Part number TGA2624
Manufacturer TriQuint Semiconductor
File Size 559.03 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2624 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Weather and Marine Radar. TGA2624 9 – 10GHz 18W GaN Power Amplifier Product Features  Frequency Range: 9 – 10GHz  PSAT: 42.5dBm @ PIN = 15dBm  P1dB: >38dBm  PAE: >40% @ PIN = 15dBm  Large Signal Gain: 27.5dB  Small Signal Gain: >35dB  Return Loss: >11dB  Bias: VD = 28V, IDQ = 365mA, VG = -2.7V Typical  Pulsed VD: PW = 100us and DC = 10%  Chip Dimensions: 5.0 x 2.62 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General Description TriQuint’s TGA2624 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2624 operates from 9 – 10GHz and provides a superior combination of power, gain and efficiency. Achieving 18W of saturated output power with 27.