Datasheet Details
| Part number | TGA2623-CP |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 557.29 KB |
| Description | GaN Power Amplifier |
| Datasheet |
 TGA2623-CP Datasheet
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General Description
TriQuint’s TGA2623-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process.
11 GHz, the TGA2623-CP achieves 32 W saturated output power, a power-added efficiency of greater than 41 %, and power gain of 27 dB.
Key Features
- Frequency Range: 10.
- 11 GHz.
- PSAT: 45 dBm @ PIN = 18 dBm.
- PAE: >41% @ PIN = 18 dBm.
- Power Gain: 27 dB @ PIN = 18 dBm.
- Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10%).
- Package Dimensions: 15.2 x 15.2 x 3.5 mm.
- Package base is pure Cu offering superior thermal management Functional Block Diagram General.