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TGA2237 - 10W GaN Power Amplifier

General Description

TriQuint’s TGA2237 is a wideband distributed amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 52% power-added efficiency.

Key Features

  • Frequency Range: 0.03.
  • 2.5GHz.
  • PSAT: 40dBm at PIN = 27dBm.
  • P1dB: >32dBm.
  • PAE: >52%.
  • Large Signal Gain: 13dB.
  • Small Signal Gain: 19dB.
  • IM3 @ 120mA POUT< 33dBm/tone: -30dBc.
  • IM5 @ 120mA POUT< 33dBm/tone: -30dBc.
  • Bias: VD = 30V, IDQ = 360mA, VG = -2.5V Typical.
  • Wideband Flat Power.
  • Chip Dimensions: 2.4 x 1.8 x 0.10 mm Functional Block Diagram 2 J1 RF In 1 J2 RF Out 3 General.

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Datasheet Details

Part number TGA2237
Manufacturer TriQuint Semiconductor
File Size 600.69 KB
Description 10W GaN Power Amplifier
Datasheet download datasheet TGA2237 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Commercial and military radar  Communications  Electronic Warfare TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Product Features  Frequency Range: 0.03 – 2.5GHz  PSAT: 40dBm at PIN = 27dBm  P1dB: >32dBm  PAE: >52%  Large Signal Gain: 13dB  Small Signal Gain: 19dB  IM3 @ 120mA POUT< 33dBm/tone: -30dBc  IM5 @ 120mA POUT< 33dBm/tone: -30dBc  Bias: VD = 30V, IDQ = 360mA, VG = -2.5V Typical  Wideband Flat Power  Chip Dimensions: 2.4 x 1.8 x 0.10 mm Functional Block Diagram 2 J1 RF In 1 J2 RF Out 3 General Description TriQuint’s TGA2237 is a wideband distributed amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2237 operates from 0.03 – 2.