Datasheet Details
| Part number | TGA2216-SM |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 762.19 KB |
| Description | 10W GaN Power Amplifier |
| Datasheet |
 TGA2216-SM Datasheet
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General Description
TriQuint’s TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.
The cascode configuration offers exceptional wideband performance as well as supporting 40V operation.
Key Features
- Frequency Range: 0.1.
- 3.0GHz.
- PSAT: >40dBm at PIN = 27dBm.
- P1dB: >35dBm.
- PAE: 50% @ midband.
- Large Signal Gain: >13dB.
- Small Signal Gain: 21dB.
- Bias: VD = 40V, IDQ = 360mA, VG1 = -2.4V Typical, VG2 = +17.7V Typical.
- Wideband Flat Gain and Power.
- Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20 RF OUT 19 18 17 9 10 11 12 13 14 15 16 General Descri.