TPN4R806PL - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TPN4R806PL
Manufacturer	Toshiba
File Size	511.03 KB
Description	Silicon N-channel MOSFET
Datasheet	TPN4R806PL Datasheet
Additional preview pages of the TPN4R806PL datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 9.5 nC (typ. ) (3) Small output charge: Qoss = 24 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN4R806PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial pr.

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Published: Feb 28, 2025 |