Datasheet4U Logo Datasheet4U.com

TPN4R203NC - Field Effect Transistor

Key Features

  • (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pul.

📥 Download Datasheet

Datasheet Details

Part number TPN4R203NC
Manufacturer Toshiba
File Size 263.23 KB
Description Field Effect Transistor
Datasheet download datasheet TPN4R203NC Datasheet

Other Datasheets by Toshiba

Part Number Description
TPN4R303NL Silicon N-channel MOSFET
TPN4R712MD Silicon P-Channel MOSFET
TPN4R806PL Silicon N-channel MOSFET
TPN11003NL MOSFETs
TPN11006NL MOSFET
TPN11006PL Silicon N-channel MOSFET
TPN1110ENH Silicon N-channel MOSFET
TPN12008QM Silicon N-Channel MOSFET
TPN1200APL Silicon N-channel MOSFET
TPN13008NH MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPN4R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN4R203NC 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.