TPN4R203NC - Field Effect Transistor

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Toshiba

Part number	TPN4R203NC
Manufacturer	Toshiba
File Size	263.23 KB
Description	Field Effect Transistor
Datasheet	TPN4R203NC Datasheet
Additional preview pages of the TPN4R203NC datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pul.

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Published: Nov 11, 2013 |