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TK6A80E - N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK6A80E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-12 1 2014-03-04 Rev.3.0 TK6A80E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Dra.

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Datasheet Details

Part number TK6A80E
Manufacturer Toshiba
File Size 270.66 KB
Description N-Channel MOSFET
Datasheet download datasheet TK6A80E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK6A80E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-12 1 2014-03-04 Rev.3.0 TK6A80E 4.