The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK6P53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6P53D
Switching Regulator Applications
Unit: mm
1.08±0.2
• Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2 5.34 ± 0.13
0.58MAX
6.1 ± 0.12 +0.4
10.0 −0.6
1.01MAX
Absolute Maximum Ratings (Ta = 25°C)
2.3 ± 0.1 0.07 ± 0.07
+0.25 1.52 −0.
TK6P53D Datasheet
