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SSM3K376R - Silicon N-Channel MOSFET

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Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment SSM3K376R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K376R,LF SSM3K376R,LXGF SSM3K376R,LXHF.
  • YES YES (Note 1) General Use Unintended Use Automotive U.

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Datasheet Details

Part number SSM3K376R
Manufacturer Toshiba
File Size 239.30 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS SSM3K376R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment SSM3K376R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K376R,LF SSM3K376R,LXGF SSM3K376R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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