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SSM3K37CT - Silicon N-Channel MOSFET

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Part number SSM3K37CT
Manufacturer Toshiba Semiconductor
File Size 200.05 KB
Description Silicon N-Channel MOSFET
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SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT ○ High Speed Switching Applications ○ Analog Switch Applications Unit : mm • 1.5Vdrive • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS 20 V VGSS ± 10 V ID 200 mA IDP 400 PD(Note1) 100 mW Tch 150 °C Tstg −55 to 150 °C CST3 Note: Using continuously under heavy loads (e.g.
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