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SSM3J66MFV - Silicon P-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Configuration SSM3J66MFV 1. Gate 2. Source 3. Drain VESM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J66MFV,L3F SSM3J66MFV,L3XGF SSM3J.

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Datasheet Details

Part number SSM3J66MFV
Manufacturer Toshiba
File Size 282.77 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J66MFV Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J66MFV 1. Applications • Load Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Configuration SSM3J66MFV 1. Gate 2. Source 3. Drain VESM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J66MFV,L3F SSM3J66MFV,L3XGF SSM3J66MFV,L3XHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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