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SSM3J65CTC - Silicon P-Channel MOSFET

Features

  • (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1110 mΩ (typ. ) (@VGS = -1.2 V) RDS(ON) = 780 mΩ (typ. ) (@VGS = -1.5 V) RDS(ON) = 650 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 510 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 400 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SSM3J65CTC CST3C ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-09 2021-03-11 Rev.4.0 SSM3J65CTC 4. Absolute Maximum Ratings (Note) (Unless otherwise speci.

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Datasheet Details

Part number SSM3J65CTC
Manufacturer Toshiba
File Size 381.28 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J65CTC Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS SSM3J65CTC 1. Applications • Power Management Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1110 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 780 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 650 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 510 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 400 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SSM3J65CTC CST3C ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-09 2021-03-11 Rev.4.0 SSM3J65CTC 4.
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