• Part: S2056
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 43.76 KB
Download S2056 Datasheet PDF
Toshiba
S2056
FEATURES . High Voltage : VC ES=1500V . High Speed : tf=0.75/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 0£6±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage (VBE=0V) Collector-Emitter Voltage (RBE=10QQ) Transient Collector-Emitter Voltage (Flash-over) Collector-Emitter Voltage (Open Base) Collector Current DC Peak Transient Collector Current (Flash-over) Base Current (Peak) Reverse Base Current DC Peak Collector Power Dissipation (Tc^ 90°C) Junction Temperature Storage Temperature Range SYMBOL VCES RATING 1500 UNIT VCER VCE (Flash-over) VCEO 700 ic 2.5 ICM IC (Flash-over IBM -IB -IBM 2.5 100 1.5 PC 10 Tstg -65-115 m A [1- >""! "°^- 5C 1. BASE 2. COLLECTOR 3l EMITTER EIAJ TOSHIBA...