• Part: S2054
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 83.07 KB
Download S2054 Datasheet PDF
Toshiba
S2054
FEATURES . High Voltage . Low Saturation Voltage . High Speed VCES=1500V VCE(sat)=4V(Typ.) tf=0.7/ts(Typ.) Built-in Damper Type. Glass Passivated Base-Collector Junction. Unit in mm 1S0MAX. 03.6±Q2 1.5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Emitter-Base Voltage VCES VEBO Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc^95°C) IC ICM IBM Ptot Junction Temperature Storage Temperature Range Thermal Resistance EQUIVALENT CIRCUIT r stg Rth(j-c) BASEO- RATING 1500 UNIT V +115 -65-115 1.6 C/W > COLLECTOR 1. BASE 2. COLLECTOR 3. EMITTER JEDEC EIA. TOSHIBA Weight : 5.2g 2-16D1A ELECTRICLAL CHARACTERISTICS (Tc=25°C) =50Q EMITTER CHARACTERISTIC Collector Cut-off Current Emitter-Base Breakdown Voltage SYMBOL TEST CONDITION Ices VBE=0, VC e=1500V v (BR)EB0 lc= 0» l E=200m A DC Current Gain Collector-Emitter Saturation...