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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES . Suitable for TV Sound Output, Vert. Deflection
Output. . Designed for Complementary Use with S1954.
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO VEBO ic IE PC
L stg
RATING UNIT -60 -50 -5
-1.5 1.5 1.5 150
-55-150
Unit in mm
9.9 MAX. 03.2±O.2
i?
tx
T XT
T MS3 a
3°
1 El -0^ HBDCT n |2 ft 3° 3°
1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK)
TOSHIBA Weight
2-10F1A 1.
S1955 Datasheet
