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RN2913AFS - Silicon PNP Transistor

Download the RN2913AFS datasheet PDF. This datasheet also covers the RN2912AFS variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (RN2912AFS_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN2913AFS
Manufacturer Toshiba
File Size 153.31 KB
Description Silicon PNP Transistor
Datasheet download datasheet RN2913AFS Datasheet

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Other Datasheets by Toshiba

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RN2913FS Silicon PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 (E1) (B1) (C2) (E2) (B2) (C1) Unit nA nA V pF kΩ • • 1.0±0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs. 0.7±0.05 1 2 3 6 5 4 0.1±0.05 • Complementary to the RN1912AFS/RN1913AFS 0.48 -0.04 +0.02 Equivalent Circuit and Bias Resistor Values C B R1 fS6 E 1. EMITTER1 2. BASE1 3.
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