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RN2910FE - Silicon PNP Epitaxial Type Transistor

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN1910FE to RN1911FE 3. Equivalent Circuit 4. Packaging and Pin Assignment ES6 ©2021 1 Toshiba Electronic Devices & Storage Corporation 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 Start of commercial production.

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Datasheet Details

Part number RN2910FE
Manufacturer Toshiba
File Size 383.83 KB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet RN2910FE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RN2910FE,RN2911FE Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2910FE,RN2911FE 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN1910FE to RN1911FE 3. Equivalent Circuit 4. Packaging and Pin Assignment ES6 ©2021 1 Toshiba Electronic Devices & Storage Corporation 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 Start of commercial production 2000-05 2021-12-23 Rev.2.0 5.
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