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RN2912AFS, RN2913AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2912AFS, RN2913AFS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05
Unit: mm
0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05
(E1) (B1) (C2) (E2) (B2) (C1) Unit nA nA V pF kΩ
• •
1.0±0.05
Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs.
0.7±0.05
1 2 3
6 5 4 0.1±0.05
•
Complementary to the RN1912AFS/RN1913AFS
0.48 -0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
B
R1
fS6
E
1. EMITTER1 2. BASE1 3.
RN2912AFS Datasheet
